Critical Condition in CuInAlSe2 Solar Cell Absorbers
Abstract: The CuInAlSe2 (CIAS)
phase offers a wide band gap which allows some adjusting in band gap energy for
high solar cell efficiency. Most research design a Cu-deficient condition for
more favorableelectronic properties, but there is still a question about the
limit of Cu-deficiency in CIAS that allows good properties of solar cell
absorber. In this research, we found the critical condition of Cu defficient in
CIAS by preparing and analyzing the CIAS thin film absorbers. The thin film
precursors were tailored using PLD system with a certain stacking order of
layer-by-layer elemental film deposition and then selenized via a solid state
reaction to form CIAS phases. The prepared thin films were analyzed for their
composition, structure, electrical-optical properties, and morphology. The results
show that CIAS thin film absorber in Cu-deficient condition still can be
performed in single phase structure until 18 at.% of Cu/CIAS with high band gap
energy, high charge carrier concentration, and good morphology. In addition,
CIAS composition in ~17 at.% of Cu/CIAS becomes a critical condition in having
good thin film absorber properties.
Author: Sujarwata
Journal Code: jptkomputergg160271