Non-Planar MOSFET Modeling with Analytical Approach
Abstract: Non-planar
structures have been identified as promising structure for next device
generation in the nanoelectronic era. However, the continuous device dimension
scaling into nano regime eventually requires more sophisticated model due to
the limitation of the existing models. A model for non-planar MOSFET structure
was elaborated in this paper, especially for device with pillar structure,
using analytical approach. The concern of channel shape and structure were
discussed as well. The result shows the shift in subthreshold characteristic in
the channel with recessed channel model. The charge sharing is suspected as one
of the key parameter in the shift of performance in the recessed region.
Author: Munawar A Riyadi,
Darjat Darjat, Teguh Prakoso, Jatmiko E. Suseno
Journal Code: jptkomputergg140117
