PERANCANGAN DAN PEMBUATAN DIVAIS SENSOR GAS CO BERBASIS INDIUM TIMAH OKSIDA (ITO) DENGAN TEKNOLOGI LAPISAN TIPIS
Abstract: In this paper it
will be described the design and manufacturing of microdevice to be used as
platform for Carbon monoxide (CO) gas sensor based on indium tin oxide (ITO).
The device has been designed on silicon substrate with an active area of 3x3
mm2 , and consisted of bonding pad, heater, electrode, and temperature sensor
components. The minimum feature size used is 50 microns, as allowed by the
capability of photolithographic process. The formation of microdevice structure
has been done mainly using lift-off technique on platinum (Pt) layer, which was
deposited by DC sputtering with aluminium (Al) as sacrificial layer. The
overall chip dimension is not more than 5x5 mm2. The measurement conducted to study the
resistance versus temperature characteristics has shown that the heater and temperature sensor
elements have functioned as expected, in which their resistances change
linearly with an increase in substrate temperature between 20 – 200 oC. The
range of increase in resistance values for the heater is 500 – 1000 ohm,
whereas for the temperature sensor is 100 – 300 ohm.
Penulis: Slamet Widodo, Goib
Wiranto
Kode Jurnal: jpkimiadd150639
