NUCLEATION AND GROWTH OF Cu THIN FILMS ON SILICON BASE INDUCED BY EXCIMER LASER ANNEALING
Abstract: The initial
growth of Cu
nucleation and its
development on silicon
base prepared by
Pressure Vapor Deposition PVD
was investigated by
Atomic Force Microscopy.
Experimental results indicate
that amorphous silicon copper
film poorly crystallized
after heat treatment
by conventional furnace
after four hours. Immediately
after annealing by
single exposure of
UV excimer laser,
the crystalline become apparently increases.
The rapid solidification has
passing the recalesence
point to spontaneously
form crystalline pattern. The
increasing of heat
transfer enlarged crystalline
to the maximum
at super lateral growth energy of 345 Jcm-2. The
agglomeration and coalescation of grains are the reason for the increment of
the surface roughness.
Keywords: nucleation, copper,
silicon, thin film, Pressure Vapor Deposition, Atomic Force Microscopy
Author: NORIAH BIDIN AND SITI
NORAIZA ABD. RAZAK
Journal Code: jpfisikagg110001
