Fabrication and Characterization of Metal-Semiconductor-Metal n-GaN UV Photodetector by PA-MOCVD
Abstract: Metal-semiconductor-metal
ultraviolet photodetectors fabricated on GaN epitaxial layers grown on (0001)
sapphire by plasma-assisted metal organic chemical vapor deposition (PA-MOCVD)
method. The photodetector with a thin GaN layer of 0.7 µm exhibited a low dark
current with a saturation value of 1.469 x 10-14 A. The responsivity was 0.56
A/W at a wavelength of 320 nm under a bias voltage of 2.5 V.
Author: D.Rusdiana, Sugianto,
A. Suhandi, Sukirno, M. Budiman, M. Barmawi
Kode Jurnal: jpfisikagg050003
