Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers
Abstract: The
static-characteristics of InAs/AlGaAs broadband self-assembled quantum-dot
laser diodes (SAQD-LDs) have been studied to solve the rate equations
numerically using fourth-order Runge-Kutta method. Energy level, size, and
composition distributions of the InAs/AlGaAs broadband quantum-dots (QDs) are
considered and their effects on Static-characteristics are investigated.
Simulated results of static-characteristics show that nonlinearity appears in
light-current characteristics whereas homogeneous broadening (HB) becomes equal
to inhomogeneous broadening (IHB). Slope-efficiency increases as the HB
heightens up to the IHB. Exceeding the HB from IHB results in degradation of
light-current characteristics. In fact, InAs/AlGaAs broadband SAQD-LD has the
best performance when HB is equal to IHB. Light-current characteristics degrade
and threshold current increases as the IHB enhances. We also investigate the
effects of QD coverage on the laser performance and show that there is an
optimum QD coverage in which the SAQD-LD operates with lowest possible
threshold current and maximum output power as whatever the QD coverage enhances
from that optimum amount, the threshold current increases and slope efficiency
decreases.
Author: D. Ghodsi Nahri, H.
Arabshahi H. Arabshahi
Journal Code: jptkomputergg120024
