Research on Electromagnetic Excitation Resonant Sensor Based on Microelectromechanical System
Abstract: In this paper, an
electromagnetic excitation resonant sensor was designed based on
Microelectromechanical system (MEMS) technology. In this new sensor, four
nc-Si/c-Si heterojunction p-MOSFETs are manufactured by using the technique of
MEMS on the N-type <100> orientation high resistance silicon wafer, and a
Wheatstone bridge is composed of four nc-Si/c-Si heterojunction MOSFETs channel
resistances, output voltage of the bridge circuit changes according to the
applied pressure. A vibration will be generated when an alternating current is
applied to the inductance coil of electromagnetic excitation resonant sensor,
the maximum power produced in the central part of the four edges of silicon
membrane, whose frequency and amplitude are associated with the current in the
inductance coil, and the applied pressure P can be detected. Using mechanics
and electromagnetism coupling field analysis by Ansys software, the simulation
to vibration situation of the silicon membrane of sensor was carried on when
vertical magnetic field and alternating current were loaded. Experimental
results show that, as the operating voltage is constant, with the increase of
current in the inductance coil the conversion of applied pressure increases,
and the output voltage of nc-Si/c-Si heterojunction MOSFETs pressure sensor is
proportional to the increase of coil magnetic field i.e. the increase of
pressure, the experimental results are consistent with the simulation results.
Author: Gang Li, Xiaofeng
Zhao, Dianzhong Wen, Yang Yu
Journal Code: jptkomputergg150113
