Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor
Abstract: In this paper, we
have developed a model of the tunneling current through a high- dielectric stack in MOS capacitors with anisotropic masses. The
transmittance was numerically calculated by employing a transfer matrix method
and including longitudinal-transverse kinetic energy coupling which is
represented by an electron phase velocity in the gate. The transmittance was
then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS
capacitors. The calculated results show that as the gate electron velocity
increases, the transmittance decreases and therefore the tunneling current
reduces. The tunneling current becomes lower as the equivalent oxide thickness
(EOT) of HfSiOxN layer increases. When the incident electron passed through the
barriers in the normal incident to the interface, the electron tunneling
process becomes easier. It was also shown that the tunneling current was
independent of the substrate orientation. Moreover, the model could be used in
designing high speed MOS devices with low tunneling currents.
Keywords: anisotropic mass,
gate velocity, high-κ dielectric stack, transfer matrix method, tunneling current
Author: Fatimah A. Noor, Ferry
Iskandar, Mikrajuddin Abdullah, Khairurrijal
Journal Code: jptkomputergg120072