Five-Level Common-Emitter Inverter Using Reverse-Blocking IGBTs
Abstract: In a high switching
frequency operation of current-source inverter (CSI), a conventional way to
obtain unidirectional power switches is by connecting discrete diodes in series
with the high speed power switches, i.e. power MOSFETs or IGBTs. However, these
discrete diodes will cause extra losses to the power converter. This paper
presents experimental test results of high switching frequency five-level
common-emitter CSI using the emerging unidirectional power switches, i.e.
reverse blocking (RB)-IGBTs. Experimental tests were also conducted to compare
the performance between power MOSFETs in series with the discrete diodes, and
the RB-IGBTs having inherent reverse blocking capability. The results show that
using RB-IGBTs, the efficiency of the power converter increase. However, it is
also confirmed that the recently available RB-IGBTs have slow reverse recovery
current than the discrete fast-recovery diodes connected in series with power
MOSFETs.
Author: Suroso, Toshihiko Noguchi
Journal Code: jptkomputergg120022
