Identifikasi Gugus SiHx (x=1, 2 dan 3) pada Silikon Berpori dari Substrat Si (111) Tipe-P
Abstract: The study of
identification of functional group SiHx (x=1, 2, 3) to typep Si (111) made by
anodizatied silicon wafer in 0,3 ohm-cm hydrofluoric (HF) has been conducted.
The objective of the research is to determine the effects of HF concentrations
and anodization time on PS functional groups. HF concentration was varied to
10%, 20%, 30% and 40% the anodization time was varied to 10,20, 40 and 60
minutes respectly. While the anodization it was used a magneticstirrer to keep
the homogenity of the solution. The existence of SiH groups ischaracterized by
FTIR spectrofotometer. The results shows that SiH group functional appears
around absorbtion area of 2112-2100 cm-1, 920-890 cm-1and 856 cm-1. Where as
the longer time anodization the fewer of SiH groups formed.
Penulis: I Nyoman Sudiana
Kode Jurnal: jpfisikadd100117
