N-Type Conductivity in Wurtzite Mn-Doped GaN thin Films Grown by Plasma Assisted MOCVD
Abstract: Ferromagnetic
semiconductor GaN:Mn thin films were successfully grown by plasma-assisted
metalorganic chemical vapor deposition (PA-MOCVD) method on c-plane sapphire
substrate. The films were grown at various Mn source flux in the range of 5 - 40 sccm and growth temperature which was
lower than that of MOCVD themal, i.e. in the range of 625-700 °C.
Cyclopentadienyl manganese tricarbonyl (CpMnT) was used as a source of Mn.
X-ray diffraction patterns confirmed that GaN:Mn films are wurtzite and do not
show second phase for film with Mn
concentration up to 6.4% at 650 °C of
growth temperature. Hall effect measurements show n-type characteristics. The
carrier (electron) density tends to decreases and Hall mobility tends to with
the increase of Mn concentration is increased. Hysteresis curves observed from
VSM measurements indicated that all of the samples are ferromagnetic at room
temperature.
Author: Budi Mulyanti, Agus Subagio,
Edy Supriyanto, Heri Sutanto, Fitri Suryani Arsyad, Pepen Arifin, Maman
Budiman, Moehamad Barmawi
Journal Code: jpfisikagg060004
