GaN-based Double-hetero Film Grown and Fabricated on (0001) Sapphire Substrates by Plasma-assisted MOCVD
Abstract: GaN-based
double-hetero film has been grown on (0001) sapphire substrate by
plasma-assisted MOCVD method. The structure of film was n-GaN/Al0.25Ga0.75N/In0.3Ga0.7N/Al0.25Ga0.75N/p-GaN.
A photoluminescence (PL) peak originating
from InGaN active layer has been observed at room temperature, which produced
emission wavelength of 453 nm corresponded to energy of 2.74 eV. However,
broadening of the peak caused by the crystalline quality of the InGaN epilayer
is still poor, which is related with fluctuation of In rich regions.
Author: A. Subagio, H.
Sutanto, E. Supriyanto, M. Budiman, P. Arifin, Sukirno, M. Barmawi
Journal Code: jpfisikagg050005
