Effect of Substrate Temperature and Target-Substrate Distance on Growth of TiO2 Thin Films by Using DC- Reactive Sputtering Technique
Abstract: Titanium oxide
(TiO2) thin films have been deposited by a DC sputtering technique onto
microscope glass slides. The effect of substrate temperature (Ts) and
target-substrate distance (Dts) on some optical and electrical properties have been
studied each individually. The structure of TiO2 thin films has been improved
and became more crystalline when Ts has been increased (from 150 ºC to 250 ºC).
The conductivity (ϭ), deposition rate (DR) and average values of grain size
(G.S) have been increased with increasing Ts while the values of band gap (Eg)
and weight percentage of the anatase phase (WA) have been decreased. The
thickness of TiO2 film has been increased from 920 nm to 960 nm with increase
Ts while it has been decreased from 960 nm to 680 nm with increase Dts (from
25mm to 35mm). As Dts has been increased, the conductivity ϭ, thickness (d) and average values of grain
size have been decreased. The decreasing of conductivity at Dts=35 maybe
attributes to increase the weight percentage of the rutile phase (WR). The XRD
results show that the TiO2 structure phase has been varied. The results show
that the optical and electrical properties of TiO2 film affected by changes the
condition parameters especially Ts and Dts as well as the density and energy of
the impinging atoms. The surface morphology and component of TiO2 thin films,
resistance, optical transmittance and structure of film were characterized by
SEM (EDX), I-V meter, UV-VIS spectrophotometer and XRD respectively.
Keywords: substrate temperature, TiO2 thin films,
DC-reactive sputtering, conductivity,
transparency, target-substrate distance
Author: Laith Rabih,
Sudjatmoko, Kuwat Triyana, Pekik Nurwantoro
Journal Code: jpfisikagg130002
