ANALYTICAL MODELING OF NON PLANAR MOSFET
Abstract: The Non Planar
MOSFET structure with curved-channel is one alternative MOSFET structure for
enhance the electrical performance. The study was focused on the non planar
devices which has curved-channel including grooved-gate, recessed-channel, V-shaped
and sidewall vertical MOSFET. The presence of corner region can effective in
reducing the electric field at the drain, thus improving reliability of short
channel effects (SCEs). The corner effect can reduce surface potential. It can
improve the characteristic of the device electrical performance, especially the
reduction of short channel effect and hot carrier effects. Therefore, the
curved-channel MOSFET has a very great application prospect in deep submicron
device architecture.
Author: Jatmiko Endro
Suseno
Journal Code: jpfisikagg120006
