Numerical Investigation of A New Junctionless Phototransistor for High-Performance and Ultra-Low Power Infrared Communication Applications
Abstract: In this paper, a new
junctionless optical controlled field effect transistor (JL-OCFET) is proposed
to improve the device performance as well as achieving low power consumption.
An overall optical and electrical performances comparison of the proposed
junctionless design and the conventional inversion mode structure (IM-OCFET)
has been developed numerically, to assess the optical modulation behavior of
the OCFET for low power optical interconnections applications. It is found
that, the proposed design demonstrates excellent capability in decreasing the
phototransistor power consumption for inter-chip optical communication
application. Moreover, the proposed device offers superior sensitivity and
ION/IOFF ratio, in addition to lower signal to noise ratio as compared to the
conventional IM-OCFET structure. The obtained results indicate the crucial role
of the junctionless (JL) design in enhancing the phototransistor performance
and reducing the total power dissipation. Such a very sensitive OCFET can be
very promising in the future low power optical receiver less compatible to CMOS
modern technology for high-quality inter-chips data communication applications.
Author: H. Ferhati, Faycal
Djeffal, T. Bentercia
Journal Code: jptkomputergg160017
