Statistical MOSFET Parameter Extraction with Parameter Selection for Minimal Point Measurement
Abstract: A method to
statistically extract MOSFET model parameters from a minimal number of
transistor I(V) characteristic curve measurements, taken during fabrication
process monitoring. It includes a sensitivity analysis of the model,
test/measurement point selection, and a parameter extraction experiment on the
process data. The actual extraction is based on a linear error model, the
sensitivity of the MOSFET model with respect to the parameters, and
Newton-Raphson iterations. Simulated results showed good accuracy of parameter
extraction and I(V) curve fit for parameter deviations of up 20% from nominal
values, including for a process shift of 10% from nominal.
Author: Marga Alisjahbana
Journal Code: jptkomputergg130078