Bipolar-CMOS-DMOS Process-Based a Robust and High-Accuracy Low Drop-Out Regulator
Abstract: A 40V BCD process
high-accuracy and robust Low Drop-Out Regulator was proposed and tape-out in
CSMC; the LDO was integrated in a LED Control and Driver SOC of outdoor
applications. The proposed LDO converted the 12V~40V input power to 5V for the
low voltage circuits inside the SOC. The robustness of LDO was important
because the application condition of the SOC was bad. It was simulated in all
process corner, -55℃~150℃
temperature and 12V~40V power voltage conditions. Simulation result shows that
the LDO works robustly in conditions mentioned above. The default
precision of LDO output voltage is ±2.75% max in all conditions, moreover, by
utilizing a trim circuit in the feedback network, the precision can be improved
to ±0.5% max after being trimmed by 3 bit digital trim signal Trim[3:1]. The
total size of the proposed LDO is 135um*450um and the maximum current
consumption is 284uA.
Author: Luwei Pan, Li Zhou,
Tao Sun
Journal Code: jptkomputergg140052
